Manipulation of etch selectivity of silicon nitride over silicon dioxide to a-carbon by controlling substrate temperature with a CF4/H2 plasma
Shih‐Nan Hsiao, Nikolay Britun, Thi‐Thuy‐Nga Nguyen, Takayoshi Tsutsumi, Kenji Ishikawa, Makoto Sekine, Masaru Hori
Topics & Concepts
SelectivityEtching (microfabrication)Substrate (aquarium)Silicon nitrideLayer (electronics)FluorocarbonSiliconPlasma-enhanced chemical vapor depositionAmorphous solidMaterials scienceSilicon dioxideCarbon nitrideAnalytical Chemistry (journal)Carbon dioxideChemistryAmorphous carbonChemical engineeringNanotechnologyCrystallographyComposite materialOrganic chemistryOptoelectronicsGeologyEngineeringCatalysisOceanographyPhotocatalysisSemiconductor materials and devicesDiamond and Carbon-based Materials ResearchPlasma Diagnostics and Applications