A tunable band gap of the layered semiconductor Zn<sub>3</sub>In<sub>2</sub>S<sub>6</sub> under pressure
Resta A. Susilo, Yu Liu, H. W. Sheng, Hongliang Dong, Raimundas Sereika, Bongjae Kim, Zhixiang Hu, Shujia Li, Mingzhi Yuan, C. Petrović, Bin Chen
Abstract
A highly tunable band gap of the layered semiconductor Zn 3 In 2 S 6 under pressure is reported. The change in the band gap is strongly coupled to the variation and transformation of the crystal structure.
Topics & Concepts
Materials scienceSemiconductorBand gapWide-bandgap semiconductorOptoelectronicsCrystal (programming language)Electronic band structureCondensed matter physicsProgramming languageComputer sciencePhysicsChalcogenide Semiconductor Thin Films2D Materials and ApplicationsQuantum Dots Synthesis And Properties