Epitaxial Growth of p-Type Cu-Doped Ga<sub>2</sub>O<sub>3</sub> Nanoarrays on MgO Substrates
Zhiguo Zhu, Tao Yan, Haotian Tian, Jinfeng Lai, Chao Wang, Chenlong Chen, Min Luo
Abstract
This study reports the successful growth of aligned Cu-doped β-Ga 2 O 3 nanoarrays using the chemical vapor deposition (CVD) method. A MgO substrate was employed for epitaxial growth of Ga 2 O 3 due to the lower lattice mismatch compared to sapphire and silicon. The morphology, growth mechanism, and optical and photoelectrochemical properties of Cu-doped β-Ga 2 O 3 nanoarrays were thoroughly characterized. The experimental results indicate that doped Cu exists in the form of monovalent cuprous ions Cu + . Additionally, the β-Ga 2 O 3 nanoarrays will exhibit p-type semiconductor properties after Cu doping at certain conditions. Therefore, this material has great potential for applications, particularly in the fields of photoelectrocatalysis and photoluminescence. These research findings provide an important reference for expanding the new application areas of Ga 2 O 3 .