1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations
Yitao Feng, Hong Zhou, Sami Alghamdi, Hao Fang, Xiaorong Zhang, Yanbo Chen, Guotao Tian, Saud Wasly, Yue Hao, Jincheng Zhang
Topics & Concepts
Schottky barrierEnhanced Data Rates for GSM EvolutionMaterials scienceComposite numberSchottky diodeOptoelectronicsDiodeMetal–semiconductor junctionComposite materialTelecommunicationsEngineeringGa2O3 and related materialsElectronic and Structural Properties of OxidesZnO doping and properties