Growth-Etch Metal–Organic Chemical Vapor Deposition Approach of WS<sub>2</sub> Atomic Layers
Assael Cohen, Avinash Patsha, Pranab K. Mohapatra, Miri Kazes, K. Ranganathan, Lothar Houben, Dan Oron, Ariel Ismach
Abstract
) domains wasis demonstrated by means of Raman spectroscopy, photoluminescence (PL) spectroscopy, and HRTEM studies. Moreover, time-resolved PL studies show very long exciton lifetimes, comparable to those observed in mechanically exfoliated flakes. Thus, the GE-MOCVD approach presented here may facilitate their integration into a wide range of applications.
Topics & Concepts
Metalorganic vapour phase epitaxyChemical vapor depositionMaterials sciencePhotoluminescenceRaman spectroscopyCrystal (programming language)NanotechnologySemiconductorHigh-resolution transmission electron microscopySpectroscopyEtching (microfabrication)OptoelectronicsEpitaxyTransmission electron microscopyOpticsLayer (electronics)Computer scienceQuantum mechanicsPhysicsProgramming language2D Materials and ApplicationsPerovskite Materials and ApplicationsMXene and MAX Phase Materials