Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors
Stefano Leone, R. Fornari, Matteo Bosi, V. Montedoro, Lutz Kirste, Philipp Doering, Fouad Benkhelifa, Mario Prescher, C. Manz, V. M. Polyakov, O. Ambacher
Topics & Concepts
SapphireEpitaxyMaterials scienceOptoelectronicsHeterojunctionElectron mobilityNucleationChemical vapor depositionCrystal (programming language)Layer (electronics)NanotechnologyChemistryOpticsProgramming languageOrganic chemistryComputer scienceLaserPhysicsGa2O3 and related materialsZnO doping and propertiesGaN-based semiconductor devices and materials