Room temperature anomalous Hall effect in antiferromagnetic Mn3SnN films
Yunfeng You, Hua Bai, Xianzhe Chen, Yongjian Zhou, Xiaofeng Zhou, Feng Pan, Cheng Song
Abstract
Rich magnetic phase transition makes the antiperovskite manganese nitride Mn3AN family an ideal platform to explore the anomalous Hall effect (AHE) with different magnetic configurations. Here, we report the observation of AHE signals up to room temperature in antiferromagnetic (AFM) (001)-oriented Mn3SnN thin films. AHE signals, originated from the Berry curvature, can be controlled by the growth-induced biaxial strain, which leads to the modulation of noncollinear AFM configurations. A relatively large biaxial strain could enhance AHE signals ascribed to the canted AFM structure induced by the piezomagnetic effect. Our findings advance the effective utilization of the AHE in AFM spintronics.