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Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC

Fumihiro Fujie, Hongyu Peng, Tuerxun Ailihumaer, Balaji Raghothamachar, Michael Dudley, Shunta Harada, Miho Tagawa, Toru Ujihara

2021Acta Materialia24 citationsDOI

Topics & Concepts

Materials scienceSynchrotronBasal planeX-rayContrast (vision)OpticsCrystal (programming language)Line (geometry)DislocationDiffractionWaferGeometryCrystallographyPhysicsComposite materialOptoelectronicsComputer scienceProgramming languageMathematicsChemistrySilicon Carbide Semiconductor TechnologiesSilicon and Solar Cell TechnologiesThin-Film Transistor Technologies
Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC | Litcius