Wafer‐fused 1300 nm VCSELs with an active region based on superlattice
S. A. Blokhin, A. V. Babichev, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, A. A. Blokhin, S. S. Rochas, Dmitrii V. Denisov, K. O. Voropaev, Alexander Ionov, N. N. Ledentsov, A. Yu. Egorov
Abstract
Abstract The 1300 nm range vertical‐cavity surface‐emitting lasers with the active region based on InGaAs/InGaAlAs superlattice are fabricated using molecular‐beam epitaxy and the double wafer‐fusion technique. Lasers with the buried tunnel junction diameter of 5 μm have shown single‐mode CW operation with the output optical power of ∼6 mW at 20°C. Opened eye diagrams are observed up to 10 Gbps.
Topics & Concepts
SuperlatticeMaterials scienceOptoelectronicsWaferOpticsEngineering physicsPhysicsSemiconductor Lasers and Optical DevicesSemiconductor Quantum Structures and DevicesPhotonic and Optical Devices