702.3 A·cm⁻²/10.4 mΩ·cm² <i>β</i>-Ga₂O₃ U-Shape Trench Gate MOSFET With N-Ion Implantation
Yongjian Ma, Xuanze Zhou, Wenbo Tang, Xiaodong Zhang, Guangwei Xu, Li Zhang, Tiwei Chen, Shige Dai, Chunxu Bian, Botong Li, Zhongming Zeng, Shibing Long
Abstract
High-performance <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 U-shaped trench-gate metal-oxide-semiconductor field-effect transistor (UMOSFET) has been demonstrated. Nitrogen ions implantation was employed to form current blocking layer. Electrons in the blocking layer can accumulate in the area near the U-shaped groove and form a conductive channel to promote current generation at a positive gate bias. The UMOSFET with an applicable threshold voltage of 4.2 V was achieved by modulating the concentration of implanted nitrogen ions. A high current density of 702.3 A/cm2, a low on-resistance of 10.4 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula> cm2, and a decent breakdown voltage of 455 V (at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {G}}=0$ </tex-math></inline-formula> V) were obtained for UMOSFET with N ions concentration of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${5}\times {10} ^{{18}}$ </tex-math></inline-formula> cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{-{3}}$ </tex-math></inline-formula> . The UMOSFET in this work offers exceptional advantages in fabrication of high-performance E-mode vertical <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 MOSFETs, facilitating the development of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3 power electronics devices.