The working principle, structural design and material development of ferroelectric field-effect transistors and random-access memories
Yanning Chen, Senlin Wang, Fang Liu, Bo Wu, Yongfeng Deng, Ran Tao, Yongyu Wu, Dawei Gao
Topics & Concepts
FerroelectricityField-effect transistorMaterials scienceRandom accessTransistorField (mathematics)Random access memoryCondensed matter physicsEngineering physicsNanotechnologyComputer scienceOptoelectronicsEngineeringPhysicsElectrical engineeringMathematicsComputer hardwareDielectricPure mathematicsOperating systemVoltageFerroelectric and Piezoelectric MaterialsFerroelectric and Negative Capacitance DevicesAdvanced Memory and Neural Computing