Advances in resistive switching memory: comprehensive insights into ECM mechanisms through TEM observations and analysis
Woonbae Sohn, Hyerim Kim, Jung Hun Lee, Young-Seok Shim, Cheon Woo Moon, Hyojung Kim
Abstract
The complex nature of ion migration at the nanoscale and the associated redox reaction in resistive switching requires a thorough understanding through transmission electron microscopy (TEM).
Topics & Concepts
Resistive random-access memoryMaterials scienceNeuroscienceNanotechnologyComputer sciencePsychologyEngineeringElectrical engineeringVoltageAdvanced Memory and Neural ComputingElectronic and Structural Properties of OxidesFerroelectric and Negative Capacitance Devices