High-pressure structural phase transition and metallization in Ga<sub>2</sub>S<sub>3</sub> under non-hydrostatic and hydrostatic conditions up to 36.4 GPa
Linfei Yang, Jianjun Jiang, Lidong Dai, Haiying Hu, Meiling Hong, Xinyu Zhang, Heping Li, Pengfei Liu
Abstract
The vibrational, electrical and structural properties of Ga<sub>2</sub>S<sub>3</sub> were explored by Raman spectroscopy, EC measurements, HRTEM and First-principles theoretical calculations under different pressure environments up to 36.4 GPa.
Topics & Concepts
Hydrostatic pressureMaterials scienceHydrostatic equilibriumRaman spectroscopyHigh-resolution transmission electron microscopyPhase transitionPhase (matter)High pressureCondensed matter physicsThermodynamicsNanotechnologyOpticsPhysicsTransmission electron microscopyQuantum mechanics2D Materials and ApplicationsChalcogenide Semiconductor Thin FilmsCrystal Structures and Properties