280 Gbit/s PAM-4 Ge/Si Electro-absorption Modulator with 3-dB Bandwidth beyond 110 GHz
Xiao Hu, Dingyi Wu, Daigao Chen, Ye Liu, Hongguang Zhang, Yang Liu, Jia Liu, Min Liu, Lu Xu, Lei Wang, Xi Xiao, Shaohua Yu
Abstract
We developed a Ge/Si electro-absorption modulator with a record-high 3-dB bandwidth beyond 110 GHz. 224, 240 and 280 Gbit/s PAM-4 eye diagrams with the TDECQ of 1.79, 2.35 and 3.33 dB are experimentally obtained, respectively.
Topics & Concepts
GigabitBandwidth (computing)Electro-absorption modulatorMaterials scienceOptoelectronicsOpticsPhysicsTelecommunicationsComputer scienceSemiconductorSemiconductor laser theoryQuantum dot laserPhotonic and Optical DevicesOptical Network TechnologiesAdvanced Photonic Communication Systems