Modeling of the Optical Properties of Black Silicon Passivated by Thin Films of Metal Oxides
М. В. Катков, Gagik Ayvazyan, Vladimir R. Shayapov, М. С. Лебедев
Abstract
Using the finite difference time domain (FDTD) method, we studied the optical properties of black silicon (BSi) layers passivated with the various metal oxides (Al2O3, TiO2, HfO2, and Sc2O3) films, obtained by atomic layer deposition (ALD) method. The results of FDTD modeling indicate an improvement in the antireflection properties of BSi/ALD film structures in the wide spectral range. The necessity to choose the optimal film thickness is shown.
Topics & Concepts
Finite-difference time-domain methodAtomic layer depositionMaterials scienceSiliconMetalThin filmDeposition (geology)Layer (electronics)OptoelectronicsBlack siliconRange (aeronautics)Black phosphorusOpticsNanotechnologyComposite materialMetallurgyPhysicsPaleontologySedimentBiologyThin-Film Transistor TechnologiesSilicon Nanostructures and PhotoluminescenceOptical Coatings and Gratings