1-nm-thick epitaxial AlN passivation for highly efficient flexible InGaN red micro-LEDs
Kiho Kong, Jun Hee Choi, Joo Hun Han, Eunsung Lee, Jinjoo Park, Nakhyun Kim, Jae Wook Lee, Chanyoung Shin, Jung Hun Park, Dong‐Chul Shin, Joosung Kim, Sunil Kim, Tae‐Gon Kim, Seokho Yun, Miyoung Kim
Abstract
Highly efficient, ultrahigh-density inorganic micro-LED displays are gaining a strong position in the market for use in augmented reality glasses. When applied to electronic contact lenses with an eye-adaptive form factor, the micro-LED displays evolve into next generation augmented reality viewers. Here, we report 1-nm-thick epitaxial AlN passivation for 1.5-μm-diameter InGaN red micro-LEDs with high external quantum efficiency of 6.5% at the peak wavelength of 649 nm. The flexible form factor of the red micro-LEDs is achieved through the development of a near-complete device transfer. By overcoming the existing bottlenecks of red spectral efficiency and form factor of inorganic micro-LEDs, we believe this will pave the way for another revolution in the augmented reality and metaverse industries. Kong et al. report 1-nm-thick epitaxial AlN passivation for 1.5-µm-diameter InGaN red micro-LEDs by Ar plasma assisted atomic layer deposition, resulting in an efficiency of 6.5% at 649 nm. A near-complete device transfer to polyimide substrates further enables high-resolution flexible micro-LEDs.