Plasma Parameters and Silicon Etching Kinetics in C4F8 + O2 + Ar Gas Mixture: Effect of Component Mixing Ratios
Byung Jun Lee, Alexander Efremov, Yunho Nam, Kwang‐Ho Kwon
Topics & Concepts
PlasmaChemistryAnalytical Chemistry (journal)Plasma modelingEtching (microfabrication)SiliconKineticsDissociation (chemistry)Gas compositionPlasma etchingThermodynamicsPhysical chemistryChromatographyOrganic chemistryQuantum mechanicsPhysicsLayer (electronics)Plasma Diagnostics and ApplicationsMetal and Thin Film MechanicsSemiconductor materials and devices