Integration of photovoltaic and photogating effects in a WSe<sub>2</sub>/WS<sub>2</sub>/p-Si dual junction photodetector featuring high-sensitivity and fast-response
Zihao Huang, Yuchen Zhou, Zhongtong Luo, Yibing Yang, Yibing Yang, Mengmeng Yang, Wei Gao, Jiandong Yao, Yu Zhao, Yuhua Yang, Yuhua Yang, Zhaoqiang Zheng, Jingbo Li
Abstract
Jones) and fast response time (rise/decay time of 657/671 μs) under 405 nm light illumination in self-powered mode. Finally, high-resolution visible-light and near-infrared imaging capabilities are demonstrated by adopting this dual-heterojunction device as a single pixel, indicating its great application prospects in future optoelectronic systems.
Topics & Concepts
HeterojunctionPhotodetectorResponsivityOptoelectronicsMaterials sciencePhotovoltaic effectPhotoconductivityPhotovoltaic systemSpecific detectivityvan der Waals forceSensitivity (control systems)PhysicsElectronic engineeringElectrical engineeringMoleculeEngineeringQuantum mechanics2D Materials and ApplicationsNanowire Synthesis and ApplicationsGraphene research and applications