Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack
Dipen Narendra Dalal, Hongbo Zhao, Jannick Kjær Jørgensen, Nicklas Christensen, Asger Bjørn Jørgensen, Szymon Bęczkowski, Christian Uhrenfeldt, Stig Munk‐Nielsen
Abstract
This paper presents a 10 kV SiC MOSFET based power stack, featuring medium voltage power conversion with a simple two-level voltage source converter topology. The design of the medium voltage (MV) power stack is realized in a commercial IGBT based three phase power stack frame. The power stack assembly comprises of the custom packaged single-chip half bridge 10 kV SiC MOSFET power modules, gate driver units with a very low isolation capacitance, DC-link capacitors, busbar and a liquid cooled heatsink. The designed power stacks are tested in a DC-fed three phase back-to-back setup with the total circulated power of 42 kVA, DC-link voltage of 6 kV, rms load current of 7 A and 5 kHz switching frequency. Under this operating conditions, an efficiency > 99% is deduced for the designed MV power stack.