Coulomb drag and plasmonic effects in graphene field-effect transistors enable resonant terahertz detection
M. Ryzhii, V. Ryzhii, Taiichi Otsuji, Vladimir Mitin, M. S. Shur
Abstract
We analyze the response of lateral n+-i-n-n+ graphene field-effect transistors (GFETs) to terahertz (THz) radiation. The nonlinearity due to the Coulomb drag of quasi-equilibrium carriers by injected ballistic carriers accompanied by plasmonic oscillations in a GFET channel enables a resonantly strong response. This effect can be used for effective resonant detection of THz radiation.
Topics & Concepts
Terahertz radiationGraphenePlasmonDragCoulombOptoelectronicsTransistorField-effect transistorPhysicsMaterials scienceCondensed matter physicsNanotechnologyElectronQuantum mechanicsVoltageThermodynamicsGraphene research and applicationsPlasmonic and Surface Plasmon ResearchTopological Materials and Phenomena