Mechanisms of Asymmetrical Turn-On and Turn-Off and the Origin of Dynamic C<sub>GD</sub> Hysteresis for Hard-Switching Superjunction MOSFETs
Hyemin Kang, E. M. Findlay, Florin Udrea
Abstract
The dV/dt in superjunction metal-oxide-semiconductor field-effect transistors (MOSFETs) during the turn-off transient has been shown to be higher than during the turn-on, which can be attributed to a shorter Miller plateau. In this article, we will show that these asymmetrical turn-on and turn-off characteristics are indirectly detected by the hysteresis of the dynamic gate-to-drain capacitance, C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GD</sub> . Moreover, this article reveals the mechanisms behind the asymmetrical switching and the origin of the hysteresis, which have been shown to be caused by the difference in the C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GD</sub> displacement current paths for the turn-off and the turn-on.