Atomic Layer Deposition of Copper Metal Films from Cu(acac)<sub>2</sub> and Hydroquinone Reductant
T. S. Tripathi, Martin Wilken, Christian Hoppe, Teresa de los Arcos, Guido Grundmeier, Anjana Devi, Maarit Karppinen
Abstract
High‐quality copper metal thin films are demanded for a number of advanced technologies. Herein, a facile ALD (atomic layer deposition) process for the fabrication of Cu metal films directly from two solid readily usable precursors, copper acetylacetonate as the source of copper and hydroquinone as the reductant is reported. This process yields highly crystalline, dense, specularly reflecting, and electrically conductive Cu films with an appreciably high growth rate of 1.8 Å/cycle at deposition temperatures as low as 160 to 240 ° C.
Topics & Concepts
CopperMaterials scienceAtomic layer depositionLayer (electronics)Deposition (geology)HydroquinoneFabricationMetalThin filmChemical engineeringElectrical conductorMetallurgyInorganic chemistryNanotechnologyComposite materialChemistryOrganic chemistryMedicineSedimentPathologyEngineeringBiologyPaleontologyAlternative medicineSemiconductor materials and devicesCopper Interconnects and ReliabilityZnO doping and properties