Performance Analysis of Gate-Stack Dual-Material DG MOSFET Using Work-Function Modulation Technique for Lower Technology Nodes
Satish Kumar Das, Umakanta Nanda, Sudhansu Mohan Biswal, Chandan Kumar Pandey, Lalat Indu Giri
Topics & Concepts
Materials scienceDrain-induced barrier loweringChannel length modulationWork functionMOSFETOptoelectronicsStack (abstract data type)CMOSElectron mobilityCharge carrierThreshold voltageElectric fieldMetal gateElectrical engineeringChannel (broadcasting)VoltageWork (physics)Short-channel effectTransistorGate oxideNanotechnologyComputer sciencePhysicsEngineeringMechanical engineeringLayer (electronics)Quantum mechanicsProgramming languageSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignFerroelectric and Negative Capacitance Devices