An Embedded 200 GHz Power Amplifier with 9.4 dBm Saturated Power and 19.5 dB Gain in 65 nm CMOS
Hadi Bameri, Omeed Momeni
Abstract
This paper presents a 200 GHz power amplifier in 65 nm bulk CMOS technology aiming for maximizing the saturated power (Psat).A matched-cascode amplification cell (amp-cell) is designed to increase supply voltage and P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</sub> , while maintaining the power gain. Embedding is used around the amp-cell to boost power gain and increase total Psat by overcoming matching loss. A low input impedance, balanced slot power combiner is proposed to increase P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</sub> even further. The PA is implemented using 8 cascaded embedded amp-cells and features 9.4dBm maximum P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</sub> and 6.3dBm OP1dB, and has 19.5dB power gain at 202GHz.