Interfacial electronic and vacancy defect engineering coupling of the Z-scheme CsSnBr<sub>3</sub>/SnS<sub>2</sub> heterostructure for photovoltaic performance: a hybrid DFT study
Minjie Zhang, Yanming Lin, Jiayi Li, Xinru Wei, Ying Peng, Zhengkun Wang, V. Maheskumar, Zhenyi Jiang, Aijun Du
Abstract
Interfacial coupling of Z-scheme CsSnBr 3 /SnS 2 heterostructure induces a narrowing band gap and reduces carrier recombination rate. Coupling interface and Br vacancy defects of CsSnBr 3 has excellent photovoltaic performance.
Topics & Concepts
HeterojunctionVacancy defectMaterials sciencePhotovoltaic systemCoupling (piping)RecombinationBand gapOptoelectronicsCondensed matter physicsChemistryElectrical engineeringPhysicsEngineeringBiochemistryMetallurgyGenePerovskite Materials and ApplicationsChalcogenide Semiconductor Thin Films2D Materials and Applications