Manipulating exchange bias in 2D magnetic heterojunction for high-performance robust memory applications
Xinyu Huang, Luman Zhang, Lei Tong, Zheng Li, Zhuiri Peng, Runfeng Lin, Wenhao Shi, Kan‐Hao Xue, Hongwei Dai, Hui Cheng, Danilo de Camargo Branco, Jianbin Xu, Junbo Han, Gary J. Cheng, Xiangshui Miao, Lei Ye
Abstract
Abstract The exchange bias (EB) effect plays an undisputed role in the development of highly sensitive, robust, and high-density spintronic devices in magnetic data storage. However, the weak EB field, low blocking temperature, as well as the lack of modulation methods, seriously limit the application of EB in van der Waals (vdW) spintronic devices. Here, we utilized pressure engineering to tune the vdW spacing of the two-dimensional (2D) FePSe 3 /Fe 3 GeTe 2 heterostructures. The EB field ( H EB , from 29.2 mT to 111.2 mT) and blocking temperature ( T b , from 20 K to 110 K) are significantly enhanced, and a highly sensitive and robust spin valve is demonstrated. Interestingly, this enhancement of the EB effect was extended to exposed Fe 3 GeTe 2 , due to the single-domain nature of Fe 3 GeTe 2 . Our findings provide opportunities for the producing, exploring, and tuning of magnetic vdW heterostructures with strong interlayer coupling, thereby enabling customized 2D spintronic devices in the future.