Ultralow voltage–driven efficient and stable perovskite light-emitting diodes
Song Zheng, Zhibin Wang, Naizhong Jiang, Hailiang Huang, Ximing Wu, Dan Li, Qian Teng, Jinyang Li, Chenhao Li, Jinsui Li, Tao Pang, Lingwei Zeng, Ruidan Zhang, Feng Huang, Lei Lei, Tianmin Wu, Fanglong Yuan, Daqin Chen
Abstract
The poor operational stability of perovskite light-emitting diodes (PeLEDs) remains a major obstacle to their commercial application. Achieving high brightness and quantum efficiency at low driving voltages, thus effectively reducing heat accumulation, is key to enhancing the operational lifetime of PeLEDs. Here, we present a breakthrough, attaining a record-low driving voltage while maintaining high brightness and efficiency. By thoroughly suppressing interface recombination and ensuring excellent charge transport, our PeLEDs, with an emission peak at 515 nanometers, achieve a maximum brightness of 90,295 candelas per square meter and a peak external quantum efficiency of 27.8% with an ultralow turn-on voltage of 1.7 volts (~70% bandgap voltage). Notably, Joule heat is nearly negligible at these low driving voltages, substantially extending the operational lifetime to 7691.1 hours. Our optimized strategies effectively tackle stability issue through thermal management, paving the way for highly stable PeLEDs.