A visible-light phototransistor based on the heterostructure of ZnO and TiO<sub>2</sub> with trap-assisted photocurrent generation
Byung Jun Kim, Jun Hyung Jeong, Eui Young Jung, Tae‐Yeon Kim, Sungho Park, Jong-Am Hong, Kyu‐Myung Lee, Woojin Jeon, Yongsup Park, Seong Jun Kang
Abstract
under the illumination of 520 nm wavelength light. This study provides a useful way to fabricate a visible-light phototransistor based on the heterostructure of wide bandgap oxide semiconductors.
Topics & Concepts
PhotocurrentMaterials scienceHeterojunctionX-ray photoelectron spectroscopyVisible spectrumOptoelectronicsPhotodiodeAtomic layer depositionBand gapUltravioletUltraviolet photoelectron spectroscopySpectroscopyPhotoconductivityLayer (electronics)NanotechnologyChemical engineeringQuantum mechanicsPhysicsEngineeringTransition Metal Oxide NanomaterialsGa2O3 and related materialsZnO doping and properties