Momentum matching and band-alignment type in van der Waals heterostructures: Interfacial effects and materials screening
Yuejiao Zhang, Yin‐Ti Ren, Xiao-Huan Lv, Xiaolin Zhao, Rui Yang, Nie-Wei Wang, Chendong Jin, Zhang Hu, Ruqian Lian, Peng-Lai Gong, Ruining Wang, Jiang-Long Wang, Xingqiang Shi
Abstract
Momentum-matched type II van der Waals heterostructures (vdWHs) have been designed by assembling layered two-dimensional semiconductors (2DSs) with special band-structure combinations----that is, the valence band edge at the \ensuremath{\Gamma} point (the Brillouin-zone center) for one 2DS and the conduction-band edge at the \ensuremath{\Gamma} point for the other [Ubrig et al., Nat. Mater. 19, 299 (2020)]. However, the band offset sizes, band-alignment types, and whether momentum matched or not, all are affected by the interfacial effects between the component 2DSs, such as the quasichemical-bonding (QB) interaction between layers and the electrical dipole moment formed around the vdW interface. Here, based on density-functional theory calculations, first we probe the interfacial effects (including different QBs for valence and conduction bands, interface dipole, and the synergistic effects of these two aspects) on band-edge evolution in energy and valley (location in the Brillouin zone) and the resulting changes in band alignment and momentum matching for a typical vdWH of monolayer InSe and bilayer $\mathrm{W}{\mathrm{S}}_{2}$, in which the band edges of subsystems satisfy the special band-structure combination for a momentum-matched type II vdWH. Then, based on the conclusions of the studied interfacial effects, we propose a practical screening method for robust momentum-matched type II vdWHs. This practical screening method can also be applied to other band-alignment types. Our current study opens a way for practical screening and designing of vdWHs with robust momentum matching and band-alignment type.