A steep-switching impact ionization-based threshold switching field-effect transistor
Chanwoo Kang, Haeju Choi, Hyeonje Son, Taeho Kang, Sangmin Lee, Sang-Min Lee, Sungjoo Lee, Sungjoo Lee
Abstract
impact ionization. Furthermore, compared to previously reported threshold-switching devices, our device demonstrated hysteresis-free switching characteristics. This study provides a promising approach for developing next-generation energy-efficient electronic devices and ultralow-power applications.
Topics & Concepts
Subthreshold swingMaterials scienceTransistorImpact ionizationOptoelectronicsSubthreshold slopeIonizationField-effect transistorSubthreshold conductionSwitching timeSwingDielectricElectrical engineeringIonPhysicsVoltageEngineeringQuantum mechanicsAcousticsAdvanced Memory and Neural ComputingSemiconductor materials and devicesFerroelectric and Negative Capacitance Devices