SrTiO3 Thin Films on Dielectric Substrates for Microwave Applications
A. V. Tumarkin, Eugene Sapego, A. G. Gagarin, Alexey Bogdan, Artem Karamov, I. T. Serenkov, В. И. Сахаров
Abstract
Thin films of strontium titanate, which have nonlinear properties that are promising for microwave applications, were grown on a polycrystalline aluminum oxide substrate using magnetron sputtering and high-temperature annealing. It was shown that the improvement of the film structure with an increase in the deposition temperature was clearly correlated with both an increase in nonlinearity and an improvement in the loss level. A capacitor based on an SrTiO3 film deposited at a deposition temperature of 900 °C and subjected to annealing demonstrated a tunability of 46% with a loss tangent of 0.009–0.014 at a frequency of 2 GHz. This was the first successful attempt to form a planar SrTiO3 capacitor on an alumina substrate, which exhibited a commutation quality factor of above 3000 in the microwave range.