Heteroepitaxial growth of β-Ga<sub>2</sub>O<sub>3</sub> thin films on single crystalline diamond (111) substrates by radio frequency magnetron sputtering
Takafumi Kusaba, Phongsaphak Sittimart, Yūki Katamune, Taisuke Kageura, Hiroshi Naragino, Shinya Ohmagari, Sreenath Mylo Valappil, Satoki Nagano, Abdelrahman Zkria, Tsuyoshi Yoshitake
Abstract
Abstract In this work, we demonstrate the first achievement in heteroepitaxial growth of β -Ga 2 O 3 thin films on single crystalline diamond (111) wafers using RF magnetron sputtering. A single monoclinic ( β -phase) structure with a monofamily { <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mover> <mml:mn>2</mml:mn> <mml:mo>¯</mml:mo> </mml:mover> </mml:math> 01} plane was obtained. XRD pole figure shows ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mover accent="true"> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> <mml:mo>̅</mml:mo> </mml:mover> </mml:math> 02) and (002) textures of the ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mover accent="true"> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> <mml:mo>̅</mml:mo> </mml:mover> </mml:math> 01) β -Ga 2 O 3 plane parallel to (111) diamond with six distinct rotational domains, confirming successful epitaxial growth. Collectively, this research provides valuable insights into the epitaxial growth of β -Ga 2 O 3 on diamond via sputtering, paving the way for scalable β -Ga 2 O 3 /diamond heterostructures for future electronic and optoelectronic applications with not only high performance but also effective self-thermal management.