Enhancing chemisorption efficiency and thin-film characteristics <i>via</i> a discrete feeding method in high-<i>k</i> dielectric atomic layer deposition for preventing interfacial layer formation
Aejin Lee, Seungwoo Lee, Dong Hee Han, Youngjin Kim, Woojin Jeon
Abstract
This study investigates the use of TiN and ZrO 2 in metal–insulator–metal capacitors, crucial components in many electronic devices, especially DRAM by averting the formation of an interfacial layer between electrodes and insulators.
Topics & Concepts
Materials scienceCapacitorAtomic layer depositionLayer (electronics)DielectricInsulator (electricity)TinMetal-insulator-metalElectrodeMetalHigh-κ dielectricDeposition (geology)OptoelectronicsDramThin filmChemisorptionChemical engineeringNanotechnologyMetallurgyElectrical engineeringVoltagePhysical chemistryAdsorptionEngineeringSedimentBiologyChemistryPaleontologySemiconductor materials and devicesFerroelectric and Negative Capacitance DevicesAdvanced Memory and Neural Computing