A Novel SiC MOSFET Embedding Low Barrier Diode With Enhanced Third Quadrant and Switching Performance
Xiaochuan Deng, Xiaojie Xu, Xuan Li, Xu Li, Yi Wen, Wanjun Chen
Abstract
A novel planar gate SiC MOSFET embedding low barrier diode (LBD-MOSFET) with improved third quadrant and switching performance is proposed and characterized in this letter. The LBD-MOSFET not only exhibits about 3 times lower diode turn on voltage than the body diode, but also successfully eliminates bipolar degradation phenomena. A low potential barrier for electrons transporting from JFET region to N <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> source region is formed in LBD-MOSFET owing to the existence of the depletion charge in LBD base region. Meanwhile, the gate-to-drain charge (Q <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gd</sub> ) and gate-to-drain capacitance (C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gd</sub> ) of LBD-MOSFET are significantly reduced by about 21× and 15× in comparison with the conventional MOSFET (C-MOSFET), due to the reduction of the overlapping area of the gate and drift region. Therefore, the obtained high frequency figures of merit (HF-FOM1 = R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on,sp</sub> × Q <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gd</sub> and HF-FOM2 = R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on,sp</sub> × C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gd</sub> ) for the LBD-MOSFET are improved by about 13 times and 9 times compared with C-MOSFET. Furthermore, a compact potential barrier analytical model based on Poisson's Law is developed to understand the origin of low potential barrier diode in SiC LBD-MOSFET. The overall enhanced performances suggest SiC LBD-MOSFET is an excellent choice for high frequency power electronic applications.