Recent Developments, Reliability Issues, Challenges and Applications of GaN HEMT Technology
Tanvika Garg, Sumit Kale
Abstract
The increasing demand for high-power and high-frequency electronics has led to the development of new materials and devices. One such material is gallium nitride (GaN), which has superior properties for power and radio frequency (RF) applications. This review paper covers various aspects of GaN HEMTs, including the early developments. The paper also presents state-of-the-art techniques that provide further insight into these devices. In addition, the review identifies some of the reliability issues and challenges that need to be addressed in order to realize the full potential of the devices. Moreover, the practical applications of GaN HEMTs across various domains are mentioned. These applications span telecommunications, where they are integral components in high-power amplifiers for base stations, to radar systems, where their high-frequency performance enables precise signal detection. Moreover, they find utility in satellite communication systems, facilitating efficient power amplification and signal processing.