On the conduction mechanism in compositionally graded AlGaN
Shashwat Rathkanthiwar, Pegah Bagheri, Dolar Khachariya, Ji Hyun Kim, Yasutomo Kajikawa, Pramod Reddy, Seiji Mita, Ronny Kirste, Baxter Moody, Ramón Collazo, Zlatko Sitar
Abstract
A two-band transport model is proposed to explain electrical conduction in graded aluminum gallium nitride layers, where the free hole conduction in the valence band is favored at high temperatures and hopping conduction in the impurity band dominates at low temperatures. The model simultaneously explains the significantly lowered activation energy for p-type conduction (∼10 meV), a nearly constant sheet conductivity at lower temperatures (200–330 K), and the anomalous reversal of the Hall coefficient caused by the negative sign of the Hall scattering factor in the hopping conduction process. A comparison between the uniform and graded samples suggests that compositional grading significantly enhances the probability of phonon-assisted hopping transitions between the Mg atoms.