Lead-Free Perovskite Narrow-Bandgap Oxide Semiconductors of Rare-Earth Manganates
Lei Chen, Guifang Zheng, Gang Yao, Pingjuan Zhang, Shangkai Dai, Yang Jiang, Heqin Li, Binbin Yu, Haiyong Ni, Shizhong Wei
Abstract
is approved as an n-type semiconductor with a direct band gap near 1.35 eV, whose theoretical Shockley-Queisser efficiency is approximately 33.7% for single-p-n-junction solar cells. This work sheds light on exploring stable oxide semiconductors with a narrow band gap for future applications.
Topics & Concepts
Band gapSemiconductorMaterials sciencePerovskite (structure)PhotovoltaicsOptoelectronicsOxidePhotovoltaic systemEnergy conversion efficiencyRaman spectroscopyNanotechnologyChemistryOpticsPhysicsCrystallographyElectrical engineeringMetallurgyEngineeringPerovskite Materials and ApplicationsQuantum Dots Synthesis And PropertiesChalcogenide Semiconductor Thin Films