Improvement in Stability and Storage Performance of All-Inorganic Perovskite CsPb(Br<sub>1–<i>x</i></sub>I<sub><i>x</i></sub>)<sub>3</sub> Memristors Based on Simple Halide Ion Migration
Ang Li, Zhiqing Wang, Zhen Peng, Jing Zhou, Wen Chen
Abstract
The facile ionic transport in all-inorganic CsPbX 3 is crucial for the switching behavior and reliability of ion migration-based memristors. This work presents a method of halide ion doping to reduce the bromine vacancies on the surface of CsPbBr 3 quantum dots (QDs) and enhance the migration barriers of bromine ions. This improves the performance of memristors and achieves a more stable resistive switching process. The switching voltages ( V SET / V RESET ) for the CsPb(Br 0.93 I 0.07 ) 3 QD-based device are 0.92 V/–3.01 V. The V SET / V RESET dispersion range has narrowed from ±0.12 V/±0.16 V for the CsPbBr 3 QD-based device to a more consistent ±0.07 V/±0.11 V, resulting in a notable improvement in switching voltage uniformity. The stability of the device over 100 cycles has been optimized, and the HRS resistance varies from 550 × (100 ± 17%) Ω to 69550 × (100 ± 4.1%) Ω, with the ON/OFF ratio increasing significantly to 10 3 . Consequently, this approach can effectively modulate memristive behaviors, indirectly suppressing the random generation of conductive channels. This is enlightening in constructing memristors with high stability and storage capacity.