True Random Number Generator Based on the Variability of the High Resistance State of RRAMs
Maryam Akbari, Sattar Mirzakuchaki, Daniel Arumí, Salvador Manich, Álvaro Gómez‐Pau, F. Campabadal, Mireia Bargalló González, R. Rodríguez‐Montañés
Abstract
Hardware-based security primitives like True Random Number Generators (TRNG) have become a crucial part in protecting data over communication channels. With the growth of internet and cloud storage, TRNGs are required in numerous cryptographic operations. On the other hand, the inherently dense structure and low power characteristics of emerging nanoelectronic technologies such as resistive-switching memories (RRAM) make them suitable elements in designing hardware security modules integrated in CMOS ICs. In this paper, a memristor based TRNG is presented by leveraging the high stochasticity of RRAM resistance value in OFF (High Resistive) state. In the proposal, one or two devices can be used depending on whether the objective is focused on saving area or obtaining a higher random bit frequency generation. The generated bits, based on experimental measurements, passed all 15 NIST tests and achieved a throughput of tens of MHz.