Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM)
Tae-Yoon Kim, Heerak Son, Inho Kim, Jaewook Kim, Suyoun Lee, Jong‐Keuk Park, Joon Young Kwak, Jongkil Park, YeonJoo Jeong
Abstract
We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based resistive switching memory device that reversibly changes its switching mode between bipolar switching (BRS) and CRS in a single memory cell depending on the operation (compliance current) and fabrication (oxygen scavenger layer thickness) conditions. In addition, the origin of the switching mode transition was investigated through electrical and optical measurement, where the conductance is believed to be determined by two factors: formation of conductive filament and modulation of Schottky barrier. This result helps design a resistive switching device with desirable and stable switching behavior.