Thermal atomic layer deposition of In <sub>2</sub> O <sub>3</sub> thin films using a homoleptic indium triazenide precursor and water
Pamburayi Mpofu, Polla Rouf, Nathan J. O’Brien, Urban Forsberg, Henrik Pedersen
Abstract
In 2 O 3 thin films are deposited using thermal atomic layer deposition with an indium( iii ) triazenide precursor and water. The films and deposition process are on par with the previously reported indium( iii ) formamidinate.
Topics & Concepts
HomolepticIndiumAtomic layer depositionThin filmLayer (electronics)Deposition (geology)ChemistryAtomic layer epitaxyAnalytical Chemistry (journal)Inorganic chemistryMaterials scienceNanotechnologyMetalOrganic chemistryGeologySedimentPaleontologySemiconductor materials and devicesZnO doping and propertiesGas Sensing Nanomaterials and Sensors