β-Ga<sub>2</sub>O<sub>3</sub> Air-Channel Field-Emission Nanodiode with Ultrahigh Current Density and Low Turn-On Voltage
Minglei Tang, Chicheng Ma, Lining Liu, Xiaolong Tan, Yan Li, Young‐Jin Lee, Guodong Wang, Dae‐Woo Jeon, Ji‐Hyeon Park, Yiyun Zhang, Xiaoyan Yi, Junxi Wang, Jinmin Li
Abstract
Field-emission nanodiodes with air-gap channels based on single β-Ga 2 O 3 nanowires have been investigated in this work. With a gap of ∼50 nm and an asymmetric device structure, the proposed nanodiode achieves good diode characteristics through field emission in air at room temperature. Measurement results show that the nanodiode exhibits an ultrahigh emission current density, a high enhancement factor of >2300, and a low turn-on voltage of 0.46 V. More impressively, the emission current almost keeps constant over a wide range (8 orders of magnitude) of air pressures below 1 atm. Meanwhile, the fluctuation in field-emission current is below 8.7% during long-time monitoring, which is better than the best reported field-emission device based on β-Ga 2 O 3 nanostructures. All of these results indicate that β-Ga 2 O 3 air-gapped nanodiodes are promising candidates for vacuum electronics that can also operate in air.