Effects of gate length on GaN HEMT performance at room temperature
S. Saadaoui, Olfa Fathallah, Hassen Maaref
Topics & Concepts
TransconductanceHigh-electron-mobility transistorMaterials scienceDeep-level transient spectroscopyOptoelectronicsTransistorElectron mobilityThreshold voltageLeakage (economics)VoltageAnalytical Chemistry (journal)ChemistryElectrical engineeringSiliconEngineeringChromatographyMacroeconomicsEconomicsGaN-based semiconductor devices and materialsGa2O3 and related materialsSemiconductor materials and devices