Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity
P. Murugapandiyan, A. Revathy, N. Ramkumar, R. Saravana Kumar, A. Mohanbabu
Topics & Concepts
Materials scienceOptoelectronicsLinearitySolid-state physicsHigh-electron-mobility transistorTransistorCondensed matter physicsElectronic engineeringPhysicsVoltageQuantum mechanicsEngineeringGa2O3 and related materialsGaN-based semiconductor devices and materialsZnO doping and properties