Highly Sensitive Photodetector Based on the n-Si/p-GaSe Vertical Heterojunction
Xiaoxiang Wu, Yali Liu, Mengge Li, Wenxuan Guo, Tianjian Ou, Cong Xiao, Jiadong Yao, Ying Yu, Yuan Zheng, Yewu Wang
Abstract
Photodetectors based on two-dimensional materials and their van der Waals (vdW) heterojunctions usually have excellent optoelectronic performance and great potential applications. Herein, gallium (Aladdin, particles, 99.999% trace metal basis), selenium (Aladdin, powder, 99.999% trace metal basis), and iodine (Alfa Aesar, 99.999% trace metal basis) are the raw materials for the growth of gallium selenide (GaSe) single crystals by the chemical vapor transport method, in which iodine is the transport agent. Subsequently, GaSe nanoflakes are exfoliated from the grown bulk GaSe crystals by mechanical exfoliation. The n-Si/p-GaSe van der Waals vertical heterojunctions have been designed and fabricated for photodetection, which show good characteristics including a high responsivity of 1.74 A/W and a fast response/recovery time of 48 μs/88 μs under zero bias owing to their type-II band structure and built-in electric field. The results indicate that n-Si/p-GaSe vdW vertical heterojunctions are promising candidates in future ultrafast optoelectronic devices.