Modulation in structural and electronic properties of 2D Ga<sub>2</sub>O<sub>3</sub> by chemical passivation
Linpeng Dong, Shun Zhou, Lei Gong, Wei Wang, Lichun Zhang, Chuan‐Lu Yang, Jianhui Yu, Weiguo Liu
Abstract
The dangling bonds on the surfaces of 2D Ga<sub>2</sub>O<sub>3</sub> can be effectively passivated by hydrofluorination, making 2D Ga<sub>2</sub>O<sub>3</sub> with ultra-high carrier mobility and bipolar transport property.
Topics & Concepts
PassivationDangling bondMaterials scienceElectron mobilityModulation (music)Chemical bondOptoelectronicsCrystallographyNanotechnologySiliconLayer (electronics)ChemistryPhilosophyAestheticsOrganic chemistryGa2O3 and related materialsElectronic and Structural Properties of OxidesZnO doping and properties