A survey of conductive and radiated EMI reduction techniques in power electronics converters across wide‐bandgap devices
Chentao Li, Qishuang Ma, Yajing Tong, Jinsong Wang, Ping Xu
Abstract
Abstract Nowadays, wide‐bandgap (WBG) devices, primarily made from silicon carbide (SiC) and gallium nitride (GaN), are widely applied in power generation, transmission, and conversion. Moreover, the application of WBG devices has had a transformative impact in the field of energy conversion. Compared with Si counterparts, SiC and GaN can remarkably improve the power conversion system efficiency and power density while generating higher electromagnetic interference (EMI) emissions. There are many studies on WBG devices and their behaviour in power systems. However, methods of mitigating EMI/electromagnetic compatibility (EMC) still lack scientific guidance. This article reviews the characteristics of WBG devices, and the significant EMI problems are discussed. Then, the EMI types, EMI causes, and methods of EMI reduction are summarized, and the advantages and disadvantages of these methods are presented as well. Based on the reviewed studies, future research, and the conclusions of this article on EMI/EMC are discussed to help relevant researchers deepen their understanding of the new challenges of EMI brought by the applications of WBG devices, which are useful in engineering.