Improving phase change memory performance with data content aware access
Shihao Song, Anup Das, Onur Mutlu, Nagarajan Kandasamy
Abstract
Phase change memory (PCM) is a scalable non-volatile memory technology that has low access latency (like DRAM) and high capacity (like Flash). Writing to PCM incurs significantly higher latency and energy penalties compared to reading its content. A prominent characteristic of PCM’s write operation is that its latency and energy are sensitive to the data to be written as well as the content that is overwritten. We observe that overwriting unknown memory content can incur significantly higher latency and energy compared to overwriting known all-zeros or all-ones content. This is because all-zeros or all-ones content is overwritten by programming the PCM cells only in one direction, i.e., using either SET or RESET operations, not both.