Hydride vapor phase epitaxial growth of AlGaN
Hajime Fujikura, Taichiro Konno, Takeshi Kimura
Abstract
Abstract The growth of AlGaN layers on GaN and AlN templates by hydride vapor phase epitaxy (HVPE) was experimentally investigated in detail. Linear control of the Al solid fraction with respect to that of the gas phase was established under conditions with a relatively low H 2 partial pressure. Severe surface deterioration caused by microcrystal inclusion and hillock formation were effectively removed through the use of HVPE conditions that enhanced an etching effect and suppressed parasitic reactions. As a result, AlGaN layers with good surface and crystal qualities were successfully prepared within almost the entire Al-fraction range by the HVPE method.
Topics & Concepts
HillockEpitaxyMaterials scienceHydridePhase (matter)Vapor phaseEtching (microfabrication)Crystal (programming language)TemplateOptoelectronicsPartial pressureAnalytical Chemistry (journal)Composite materialNanotechnologyMetallurgyLayer (electronics)ChemistryThermodynamicsMetalComputer scienceProgramming languagePhysicsOrganic chemistryChromatographyOxygenGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties