Study of the Thermal Properties and Lattice Disorder Effects in CdTe–Based Crystals: CdBeTe, CdMnTe, and CdZnTe
Diksha Singh, K. Strzałkowski, Ali Abouais, Amine Alaoui‐Belghiti
Abstract
Mixed semiconductor ternary crystals were grown using the Bridgman–Stockbarger method. This is a high–temperature and high–pressure crystal growth method. Cd1–xBexTe crystals were grown in the range of composition 0 < x < 0.1, such as 0.00, 0.01, 0.03, 0.05, and 0.1. The main goal of this paper was to compare the thermal properties of CdBeTe with previously grown CdMnTe and CdZnTe–mixed ternary crystals. The photopyroelectric technique was applied to examine the thermal properties. The thermal diffusivity and effusivity values were obtained after testing all the samples, and the thermal conductivity was calculated then. As such, a complete thermal characterization of the crystals was carried out. For further characterization, the thermal conductivity versus composition was checked by applying the Sadao Adachi model. Thanks to that, we were able to determine the total thermal resistivity of the crystals and the additional resistivity which arises from the lattice disorder. As such, the disorder effects arising from substituting the native atom with a foreign one were characterized for all crystals. We were looking for the best substitution of the Cd atom in the CdTe matrix based on the compounds’ thermal properties. It turned out that Zn and Mn introduce a similar disorder, with Be being the highest one.